This year’s FMS 2025, held in beautiful Santa Clara, expanded their lineup to include all aspects of Memory and Storage. Their ‘Flash Memory Summit’ now called ‘The Future of Memory and Storage’ had always been a hub for new industry connections and engaging with new customers and industry experts. Even if terms like DRAM, DNA data storage, UCIe chiplet interconnects, Compute Express Link (CXL), AI/ML, NVMe, ZNS sound like random letters and words to you, innovation and making memory and storage both faster and more affordable, have impacted everyone’s lives for the better. But now there’s a new reality that’s been the most used abbreviation of 2024.
There is an unprecedented need for high-capacity, extreme performance, and low-power solutions.”
Samsung and the Future of AI
One of the panels that drew the attention of attendees was Samsung’s participation in “The AI Revolution: Fueling New Demands for Memory and Storage” panel hosted by NVIDIA. AI, often called a ‘paradigm shift’ created a whole new demand for high-capacity solutions to accommodate the unfathomable workload it demands. LLMs (large language models) alone create a complexity in processing power and the demand for ‘low-power and high-capcity solutions’ becomes a challenge rewarding the company that’s quickest to adapt. Sangyeun (Paul) Cho, EVP of Product Planning at Samsung Electronics America spoke and helped distill why Samsung recieved the “Most Innovative Memory Technology” award at FMS 2025.
